Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-2800C16-4GVR 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-2800C16-4GVR 4GB

G Skill Intl F4-2800C16-4GVR 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 67

左右 61% 更低的延时
更快的写入速度，GB/s

9.0 8.3

测试中的平均数值

G Skill Intl F4-2800C16-4GVR 4GB

需要考虑的原因
G Skill Intl F4-2800C16-4GVR 4GB

报告一个错误

更快的读取速度，GB/s

15.9 12.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2800C16-4GVR 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 67
读取速度，GB/s

12.8 15.9
写入速度，GB/s

9.0 8.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 1850

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF2G64AZ-2G3A1 16GB

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Kingston 9965516-430.A00G 16GB

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EXCELERAM EKBLACK4163016AD 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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EVGA 16G-D4-2800-MR 4GB

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Corsair CMD64GX4M8X4000C19 8GB

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Crucial Technology BLT8G4D26AFTA.16FBD 8GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2800C16-4GVR 4GB

G Skill Intl F4-2800C16-4GVR 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMK16GX4M1B3000C15 16GB

Corsair CMK16GX4M1B3000C15 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

PUSKILL PJ8TFK1GM8 8GB

PUSKILL PJ8TFK1GM8 8GB