Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3000C14-16GVKD 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 10% 更低的延时

G Skill Intl F4-3000C14-16GVKD 16GB

需要考虑的原因
G Skill Intl F4-3000C14-16GVKD 16GB

报告一个错误

更快的读取速度，GB/s

13.4 12.8

测试中的平均数值
更快的写入速度，GB/s

10.3 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-3000C14-16GVKD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 29
读取速度，GB/s

12.8 13.4
写入速度，GB/s

9.0 10.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT325S6BFR8C-H9 2GB

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Apacer Technology 78.CAGNT.AR40B 8GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Corsair CMR16GX4M2C3466C16 8GB

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Crucial Technology BLS8G3N18AES4.16FE 8GB

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Corsair CMD32GX4M2B3466C16 16GB

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