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Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB

Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3200C16-16GTZSK 16GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 26% 更低的延时
G Skill Intl F4-3200C16-16GTZSK 16GB 需要考虑的原因
G Skill Intl F4-3200C16-16GTZSK 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.9 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 35
  • 读取速度，GB/s
    12.8 left arrow 15.9
  • 写入速度，GB/s
    9.0 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 3147

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9905403-061.A00LF 2GB
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内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C16-16GTZSK 16GB
G Skill Intl F4-3200C16-16GTZSK 16GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
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OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston KHX2666C16/16G 16GB
Kingston KHX2666C16/16G 16GB
内存RAM
Kingston 9905403-444.A00LF 4GB
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G Skill Intl F4-3200C15-8GVR 8GB
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内存RAM
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Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM
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Corsair CM2X1024-6400C4 1GB
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Corsair CMW16GX4M1Z3600C18 16GB
内存RAM
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内存RAM
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A-DATA Technology DDR4 2666 8GB
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Wilk Elektronik S.A. GR2133S464L15/16G 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
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Kingston 9905713-019.A00G 4GB
内存RAM
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Corsair CMV4GX3M1B1600C11 4GB
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Crucial Technology BLS8G4D240FSB.16FBD 8GB
内存RAM
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
Ramaxel Technology RMSA3260NA78HAF-2666 8GB
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Gloway International Co. Ltd. TYA4U2666D19161C 16GB
内存RAM