Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Samsung M391B5673EH1-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时
更快的读取速度，GB/s

12.8 9.1

测试中的平均数值
更快的写入速度，GB/s

9.0 7.9

测试中的平均数值

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

12.8 9.1
写入速度，GB/s

9.0 7.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 2090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Kingmax Semiconductor FLFF65F-C8KM9 4GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Kingston 99U5403-124.A00LF 8GB

Kingston 99U5403-124.A00LF 8GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Kingston KHX2133C13D4/8GX 8GB

Kingston KHX2133C13D4/8GX 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Essencore Limited IM48GU88N24-FFFHMB 8GB

Essencore Limited IM48GU88N24-FFFHMB 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Kingston 99U5665-001.A00G 4GB

Kingston 99U5665-001.A00G 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingston 9905711-038.A00G 8GB

Kingston 9905711-038.A00G 8GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

Crucial Technology BL16G32C16U4B.M16FE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) PSD416G24002 16GB

Patriot Memory (PDP Systems) PSD416G24002 16GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-TF 32GB

Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Corsair CMK16GX4M2Z3600C20 8GB

Corsair CMK16GX4M2Z3600C20 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Corsair CMK16GX4M1D3000C16 16GB

Corsair CMK16GX4M1D3000C16 16GB