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Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Samsung M391B5673EH1-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 45
    左右 42% 更低的延时
  • 更快的读取速度，GB/s
    12.8 left arrow 6.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 6.3
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
报告一个错误
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 45
  • 读取速度，GB/s
    12.8 left arrow 6.9
  • 写入速度，GB/s
    9.0 left arrow 6.3
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, TBD2 V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 1499

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB RAM的比较

A-DATA Technology AM2L16BC4R1-B0AS 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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