Samsung M391B5673EH1-CH9 2GB vs Kingston 9905744-005.A00G 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kingston 9905744-005.A00G 16GB

Kingston 9905744-005.A00G 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 31

左右 16% 更低的延时

Kingston 9905744-005.A00G 16GB

需要考虑的原因
Kingston 9905744-005.A00G 16GB

报告一个错误

更快的读取速度，GB/s

17.3 12.8

测试中的平均数值
更快的写入速度，GB/s

14.2 9.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kingston 9905744-005.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 31
读取速度，GB/s

12.8 17.3
写入速度，GB/s

9.0 14.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2949

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation W4U2666PS-8GC19 8GB

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Samsung M391B5673EH1-CH9 2GB

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A-DATA Technology DQKD1A08 1GB

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Kingston 9905622-025.A00G 4GB

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Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Corsair CMR32GX4M4C3466C16 8GB

Corsair CMR32GX4M4C3466C16 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Team Group Inc. Dark-1866 4GB

Team Group Inc. Dark-1866 4GB

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G Skill Intl F4-3733C17-4GTZ 4GB

G Skill Intl F4-3733C17-4GTZ 4GB