Samsung M391B5673EH1-CH9 2GB vs Kingston 99U5663-007.A00G 16GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kingston 99U5663-007.A00G 16GB

Kingston 99U5663-007.A00G 16GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 38% 更低的延时

Kingston 99U5663-007.A00G 16GB

需要考虑的原因
Kingston 99U5663-007.A00G 16GB

报告一个错误

更快的读取速度，GB/s

15.1 12.8

测试中的平均数值
更快的写入速度，GB/s

12.5 9.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kingston 99U5663-007.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 42
读取速度，GB/s

12.8 15.1
写入速度，GB/s

9.0 12.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 2822

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F3-1866C8-8GTX 8GB

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Kingston 99U5624-003.A00G 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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A-DATA Technology DQVE1908 512MB

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G Skill Intl F4-3000C15-8GVGB 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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SK Hynix DDR2 800 2G 2GB

A-DATA Technology DDR4 2666 8GB

A-DATA Technology DDR4 2666 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3200C14-16GVK 16GB

G Skill Intl F4-3200C14-16GVK 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Essencore Limited KD4AGU88C-26N190A 16GB

Essencore Limited KD4AGU88C-26N190A 16GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

SK Hynix HMA81GU6DJR8N-XN 8GB

SK Hynix HMA81GU6DJR8N-XN 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB