Samsung M391B5673EH1-CH9 2GB vs Kllisre DDR4-8GB 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 46

左右 43% 更低的延时
更快的读取速度，GB/s

12.8 11.4

测试中的平均数值
更快的写入速度，GB/s

9.0 8.1

测试中的平均数值

Kllisre DDR4-8GB 8GB

需要考虑的原因
Kllisre DDR4-8GB 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kllisre DDR4-8GB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 46
读取速度，GB/s

12.8 11.4
写入速度，GB/s

9.0 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2311

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

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Kingston 99U5584-005.A00LF 4GB

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Corsair CMW16GX4M2A2666C16 8GB

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Kingston MSI24D4U7S8MH-8 8GB

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Crucial Technology CT51264BF160BJ.C8F 4GB

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Kingston ACR32D4U2S8ME-16 16GB

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Kingston 9905403-061.A00LF 2GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

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Corsair CMV8GX4M1L2400C16 8GB