Samsung M391B5673EH1-CH9 2GB vs Micron Technology 36ASF4G72PZ-2G3D1 32GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时
更快的读取速度，GB/s

12.8 10.6

测试中的平均数值
更快的写入速度，GB/s

9.0 8.1

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G3D1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G3D1 32GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

12.8 10.6
写入速度，GB/s

9.0 8.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2143 2237

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX2666C15D4/4G 4GB

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Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Micron Technology 36ASF4G72PZ-2G3D1 32GB

Samsung M393B1G70BH0-CK0 8GB

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Apacer Technology GD2.1527CS.001 8GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Team Group Inc. TEAMGROUP-UD4-2800 8GB

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Apacer Technology 78.A1GC6.9H10C 2GB

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G Skill Intl F4-4000C18-32GTZN 32GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

Micron Technology 8ATF51264AZ-2G1AY 4GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CMK16GX4M2D2400C14 8GB

Corsair CMK16GX4M2D2400C14 8GB