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Samsung M391B5673EH1-CH9 2GB
Nanya Technology NT8GA64D88CX3S-JR 8GB

Samsung M391B5673EH1-CH9 2GB vs Nanya Technology NT8GA64D88CX3S-JR 8GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 38
    左右 32% 更低的延时
Nanya Technology NT8GA64D88CX3S-JR 8GB 需要考虑的原因
Nanya Technology NT8GA64D88CX3S-JR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.2 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.8 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 38
  • 读取速度，GB/s
    12.8 left arrow 14.2
  • 写入速度，GB/s
    9.0 left arrow 9.8
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 2451

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Nanya Technology NT8GA64D88CX3S-JR 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
Nanya Technology NT8GA64D88CX3S-JR 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
SK Hynix HMA41GR7MFR8N-TFT1 8GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Kingston KHX2400C1C14/16G 16GB
Kingston KHX2400C1C14/16G 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2400C14-16GVK 16GB
G Skill Intl F4-2400C14-16GVK 16GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
SK Hynix GKE160SO102408-3000 16GB
SK Hynix GKE160SO102408-3000 16GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
G Skill Intl F4-3733C17-8GTZA 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
Ramaxel Technology RMSA3330ME88HCF-3200 32GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
InnoDisk Corporation 16GB
InnoDisk Corporation 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLT4G4D30AETA.K8FE 4GB
Crucial Technology BLT4G4D30AETA.K8FE 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Apacer Technology 78.CAGP7.AFW0C 8GB
Apacer Technology 78.CAGP7.AFW0C 8GB
内存RAM