Samsung M391B5673FH0-CH9 2GB vs Micron Technology 16ATF2G64AZ-2G6E1 16GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 38

左右 26% 更低的延时

Micron Technology 16ATF2G64AZ-2G6E1 16GB

需要考虑的原因
Micron Technology 16ATF2G64AZ-2G6E1 16GB

报告一个错误

更快的读取速度，GB/s

15 13.3

测试中的平均数值
更快的写入速度，GB/s

12.5 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 38
读取速度，GB/s

13.3 15.0
写入速度，GB/s

8.5 12.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2213 3005

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-3733 8GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

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Essencore Limited IM44GU48N24-FFFHAB 4GB

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Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Kingston KMKYF9-MIH 8GB

Kingston KMKYF9-MIH 8GB

Kingston 99U5469-045.A00LF 4GB

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Micron Technology 8ATF1G64AZ-2G3H1R 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

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Crucial Technology BLM16G44C19U4B.M8FB1 16GB

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Kingston KHX1600C9S3L/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB

Wilk Elektronik S.A. GR2666D464L19S/8G 8GB