Samsung M391B5673FH0-CH9 2GB vs Micron Technology 4ATF51264HZ-2G3B2 4GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 31

左右 10% 更低的延时

Micron Technology 4ATF51264HZ-2G3B2 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B2 4GB

报告一个错误

更快的读取速度，GB/s

15.4 13.3

测试中的平均数值
更快的写入速度，GB/s

11.2 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 31
读取速度，GB/s

13.3 15.4
写入速度，GB/s

8.5 11.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2213 2447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

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A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Corsair CMW16GX4M1Z3200C16 16GB

Corsair CMW16GX4M1Z3200C16 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Micron Technology 4ATF51264HZ-2G3B2 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BL32G32C16U4WL.M16FB 32GB

Crucial Technology BL32G32C16U4WL.M16FB 32GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F4-4400C16-8GTRS 8GB

G Skill Intl F4-4400C16-8GTRS 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

SK Hynix HMA82GR7AFR4N-TF 16GB

SK Hynix HMA82GR7AFR4N-TF 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingmax Semiconductor GLLF62F-C6---------- 4GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Crucial Technology CT8G4DFD824A.C16FDD2 8GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Essencore Limited KD4AGU880-32A160U 16GB

Essencore Limited KD4AGU880-32A160U 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Crucial Technology BLS8G4D26BFSE.16FBR2 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB

Micron Technology 16ATF2G64AZ-2G3A1 16GB