Samsung M391B5673FH0-CH9 2GB vs SK Hynix HMA81GS6CJRJR-VK 8GB

总分

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

总分

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

差异规格评论

差异

Samsung M391B5673FH0-CH9 2GB

需要考虑的原因
Samsung M391B5673FH0-CH9 2GB

报告一个错误

SK Hynix HMA81GS6CJRJR-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6CJRJR-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 28

左右 -8% 更低的延时
更快的读取速度，GB/s

19.2 13.3

测试中的平均数值
更快的写入速度，GB/s

12.8 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673FH0-CH9 2GB

SK Hynix HMA81GS6CJRJR-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 26
读取速度，GB/s

13.3 19.2
写入速度，GB/s

8.5 12.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2213 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CB8GS2400.C8D 8GB

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G Skill Intl F4-3733C17-8GTZKW 8GB

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Samsung M378A1G43DB0-CPB 8GB

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Kingston 99U5469-045.A00LF 4GB

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GIGA - BYTE Technology Co Ltd GP-GR26C16S8K2HU416 8GB

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Kingston HX318C10FK/4 4GB

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Kingston 99U5428-018.A00LF 8GB

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SK Hynix HYMP512S64CP8-Y5 1GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

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Qimonda 72T128420EFA3SB2 1GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB