Samsung M393A1G40DB0-CPB 8GB vs Kingston ACR26D4U9S8ME-8X 8GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

Kingston ACR26D4U9S8ME-8X 8GB

Kingston ACR26D4U9S8ME-8X 8GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

Kingston ACR26D4U9S8ME-8X 8GB

需要考虑的原因
Kingston ACR26D4U9S8ME-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 49

左右 -63% 更低的延时
更快的读取速度，GB/s

15.5 10.9

测试中的平均数值
更快的写入速度，GB/s

12.8 8.7

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

Kingston ACR26D4U9S8ME-8X 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

49 30
读取速度，GB/s

10.9 15.5
写入速度，GB/s

8.7 12.8
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2427 3090

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Micron Technology 16ATF2G64HZ-2G6E3 16GB

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Micron Technology 16ATF2G64HZ-3G2J1 16GB

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G Skill Intl F5-5600J4040C16G 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Crucial Technology BL16G32C16U4W.16FE 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

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Kingston KHX3200C20S4/16G 16GB

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Corsair CMV8GX4M1A2400C16 8GB

Corsair CMV8GX4M1A2400C16 8GB