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Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Samsung M393A1G40DB0-CPB 8GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

总分
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分
star star star star star
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

差异 规格 评论

差异

Samsung M393A1G40DB0-CPB 8GB 需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 54
    左右 9% 更低的延时
  • 更快的读取速度，GB/s
    10.9 left arrow 9.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.7 left arrow 7.3
    测试中的平均数值
Micron Technology 18ASF1G72PDZ-2G1B1 8GB 需要考虑的原因
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
报告一个错误

规格

完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 54
  • 读取速度，GB/s
    10.9 left arrow 9.3
  • 写入速度，GB/s
    8.7 left arrow 7.3
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2427 left arrow 1904

Samsung M393A1G40DB0-CPB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Kingston 9905734-061.A00G 32GB
Kingston 9905734-061.A00G 32GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
Crucial Technology CT8G4DFD8213.C16FBD1 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
Crucial Technology CT16G4SFD824A.M16FD1 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C16-16GTZKW 16GB
G Skill Intl F4-3200C16-16GTZKW 16GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston KHX3000C16D4/16GX 16GB
Kingston KHX3000C16D4/16GX 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
Crucial Technology BLS16G4D32AESE.M16FE 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-2400C17-16GSXF 16GB
G Skill Intl F4-2400C17-16GSXF 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK64GX4M4D3600C18 16GB
Corsair CMK64GX4M4D3600C18 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
Crucial Technology BLS4G4D26BFSB.8FB 4GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
Lexar Co Limited LD4AS008G-H2666GST 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Kingston 99U5665-001.A00G 4GB
Kingston 99U5665-001.A00G 4GB
内存RAM