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Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Samsung M393A1G40DB0-CPB 8GB vs Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Overall score
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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Overall score
star star star star star
Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB

Differences Specifications Comments

Differences

Samsung M393A1G40DB0-CPB 8GB Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    49 left arrow 54
    Around 9% lower latency
  • Faster reading speed, GB/s
    10.9 left arrow 9.3
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.3
    Average value in the tests
Micron Technology 18ASF1G72PDZ-2G1B1 8GB Reasons to consider
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Report a bug

Specifications

Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 18ASF1G72PDZ-2G1B1 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    49 left arrow 54
  • Read speed, GB/s
    10.9 left arrow 9.3
  • Write speed, GB/s
    8.7 left arrow 7.3
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2427 left arrow 1904

Samsung M393A1G40DB0-CPB 8GB RAM comparisons

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Micron Technology 18ASF1G72PDZ-2G1B1 8GB RAM comparisons

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
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Latest comparisons

Samsung M393A1G40DB0-CPB 8GB
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