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Samsung M393A1G40DB0-CPB 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Samsung M393A1G40DB0-CPB 8GB vs Patriot Memory (PDP Systems) 4000 C16 Series 8GB

总分
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 4000 C16 Series 8GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB

差异 规格 评论

差异

Samsung M393A1G40DB0-CPB 8GB 需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
Patriot Memory (PDP Systems) 4000 C16 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 49
    左右 -158% 更低的延时
  • 更快的读取速度，GB/s
    21.9 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    22.2 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 19
  • 读取速度，GB/s
    10.9 left arrow 21.9
  • 写入速度，GB/s
    8.7 left arrow 22.2
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2427 left arrow 4574

Samsung M393A1G40DB0-CPB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Patriot Memory (PDP Systems) 4000 C16 Series 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
SpecTek Incorporated ?????????????????? 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
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SK Hynix HMA81GS6DJR8N-VK 8GB
SK Hynix HMA81GS6DJR8N-VK 8GB
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SK Hynix HMA82GR7AFR4N-TF 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
Crucial Technology CT8G4DFS8213.C8FBR1 8GB
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Kingston 99U5474-037.A00LF 4GB
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G Skill Intl F4-3200C16-16GTRS 16GB
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Kingston 99U5474-022.A00LF 2GB
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Kingston 9905402-665.A00LF 4GB
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Gloway International (HK) STK2133C15-8GB 8GB
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Kingston 9905403-437.A01LF 4GB
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Kingston 9905701-020.A00G 16GB
内存RAM
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Samsung M4 70T2953EZ3-CE6 1GB
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内存RAM
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Apacer Technology 78.C1GMS.C7Z0C 8GB
Apacer Technology 78.C1GMS.C7Z0C 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
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内存RAM
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内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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Micron Technology 36ASF2G72PZ-2G4AT 16GB
内存RAM