RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M393A1G40DB0-CPB 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Samsung M393A1G40DB0-CPB 8GB vs Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

总分
star star star star star
Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分
star star star star star
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

差异 规格 评论

差异

Samsung M393A1G40DB0-CPB 8GB 需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB
报告一个错误
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB 需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 49
    左右 -88% 更低的延时
  • 更快的读取速度，GB/s
    18.6 left arrow 10.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.2 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25 更高的带宽

规格

完整的技术规格清单
Samsung M393A1G40DB0-CPB 8GB
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 26
  • 读取速度，GB/s
    10.9 left arrow 18.6
  • 写入速度，GB/s
    8.7 left arrow 16.2
  • 内存带宽，mbps
    17000 left arrow 21300
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2427 left arrow 3756

Samsung M393A1G40DB0-CPB 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Kingston 9905403-156.A00LF 2GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB RAM的比较

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMT32GX4M4C3200C14 8GB
Corsair CMT32GX4M4C3200C14 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
Kingston KCRXJ6-MIE 16GB
Kingston KCRXJ6-MIE 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Apacer Technology 78.BAGMD.AF20B 4GB
Apacer Technology 78.BAGMD.AF20B 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK64GX4M8X4200C19 8GB
Corsair CMK64GX4M8X4200C19 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905598-040.A00G 16GB
Kingston 9905598-040.A00G 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
AMD R7S44G2606U1S 4GB
AMD R7S44G2606U1S 4GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-3200C15-16GTZR 16GB
G Skill Intl F4-3200C15-16GTZR 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CM4X16GE2133C15S2 16GB
Corsair CM4X16GE2133C15S2 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT16GX4M2C3000C15 8GB
Corsair CMT16GX4M2C3000C15 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Golden Empire CL14-16-16 D4-2400 16GB
Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F4-2133C15-8GFXR 8GB
G Skill Intl F4-2133C15-8GFXR 8GB
内存RAM
Kingston KHX1600C9D3/4G 4GB
Kingston KHX1600C9D3/4G 4GB
Kingston 9905712-048.A00G 16GB
Kingston 9905712-048.A00G 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A5143EB0-CPB 4GB
Samsung M471A5143EB0-CPB 4GB
内存RAM