Samsung M393B1G70BH0-YK0 8GB vs Corsair CMK8GX4M2A2400C14 4GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Corsair CMK8GX4M2A2400C14 4GB

Corsair CMK8GX4M2A2400C14 4GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Corsair CMK8GX4M2A2400C14 4GB

需要考虑的原因
Corsair CMK8GX4M2A2400C14 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 49

左右 -48% 更低的延时
更快的读取速度，GB/s

16.1 10.2

测试中的平均数值
更快的写入速度，GB/s

11.9 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Corsair CMK8GX4M2A2400C14 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 33
读取速度，GB/s

10.2 16.1
写入速度，GB/s

8.1 11.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 2730

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-UD4-3200 8GB

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Samsung M471B5273DH0-CK0 4GB

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Micron Technology 9ASF51272PZ-2G1B1 4GB

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Kingston KHX2133C11D3/4GX 4GB

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G Skill Intl F4-3466C16-4GVK 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F4-3000C15-8GTZB 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Essencore Limited KD4AGU88C-26N1900 16GB

Essencore Limited KD4AGU88C-26N1900 16GB

Corsair CMD16GX3M2A1866C9 8GB

Corsair CMD16GX3M2A1866C9 8GB

Kingston KHX3300C16D4/4GX 4GB

Kingston KHX3300C16D4/4GX 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Asgard VMA42UH-MEC1U2AJ2 16GB

Asgard VMA42UH-MEC1U2AJ2 16GB