Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology BL8G26C16U4W.8FD 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Crucial Technology BL8G26C16U4W.8FD 8GB

需要考虑的原因
Crucial Technology BL8G26C16U4W.8FD 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 49

左右 -69% 更低的延时
更快的读取速度，GB/s

16.2 10.2

测试中的平均数值
更快的写入速度，GB/s

13.0 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 29
读取速度，GB/s

10.2 16.2
写入速度，GB/s

8.1 13.0
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 3221

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Samsung M471B5673FH0-CF8 2GB

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Crucial Technology CT51264BF160BJ.M8F 4GB

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G Skill Intl F4-3333C16-8GTZSW 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CMD16GX4M4A2800C16 4GB

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Smart Modular SH564128FH8NZQNSCG 4GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Kingston 9905471-076.A00LF 8GB

Corsair CMSX32GX4M2A3000C18 16GB

Corsair CMSX32GX4M2A3000C18 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB

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Crucial Technology BLM8G40C18U4B.M8FE1 8GB

Samsung M471B1G73EB0-YK0 8GB

Samsung M471B1G73EB0-YK0 8GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB

Crucial Technology BLS16G4D32AESE.M16FE 16GB