Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 49

左右 -113% 更低的延时
更快的读取速度，GB/s

19.6 10.2

测试中的平均数值
更快的写入速度，GB/s

17.6 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 23
读取速度，GB/s

10.2 19.6
写入速度，GB/s

8.1 17.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 4000

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT102464BF160B-16F 8GB

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Kingston 9905458-017.A01LF 4GB

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

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Kingston K531R8-MIN 4GB

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G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Smart Modular SMS4TDC3C0K0446SCG 4GB

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Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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G Skill Intl F4-3200C15-16GTZR 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Heoriady M378A1K43BB2-CTD 8GB

Heoriady M378A1K43BB2-CTD 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kingston KMKYF9-MID 8GB

Kingston KMKYF9-MID 8GB

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Crucial Technology BLS4G4D240FSA.M8FADM 4GB

G Skill Intl F4-2400C15-8GFX 8GB

G Skill Intl F4-2400C15-8GFX 8GB