Samsung M393B1G70BH0-YK0 8GB vs Crucial Technology CT8G4SFD8213.C16FBD2 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

需要考虑的原因
Crucial Technology CT8G4SFD8213.C16FBD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 49

左右 -29% 更低的延时
更快的读取速度，GB/s

13.4 10.2

测试中的平均数值
更快的写入速度，GB/s

10.8 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Crucial Technology CT8G4SFD8213.C16FBD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 38
读取速度，GB/s

10.2 13.4
写入速度，GB/s

8.1 10.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2465 2398

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kingston 9965433-034.A00LF 4GB

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Gold Key Technology Co Ltd NMUD416E86-3200D 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

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Boya Microelectronics Inc. AM52SE22G64AP-RQ 16GB