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Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB

Samsung M393B1G70BH0-YK0 8GB vs G Skill Intl F4-4000C17-8GTZRB 8GB

总分
star star star star star
Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分
star star star star star
G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
G Skill Intl F4-4000C17-8GTZRB 8GB 需要考虑的原因
G Skill Intl F4-4000C17-8GTZRB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 49
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    21 left arrow 10.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    19.4 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 25
  • 读取速度，GB/s
    10.2 left arrow 21.0
  • 写入速度，GB/s
    8.1 left arrow 19.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2465 left arrow 4129

Samsung M393B1G70BH0-YK0 8GB RAM的比较

Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Kingston ACR512X64D3S13C9G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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G Skill Intl F4-2400C15-8GVR 8GB
G Skill Intl F4-2400C15-8GVR 8GB
内存RAM
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内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
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A-DATA Technology AO1P32MC8T1-BW3S 8GB
内存RAM
Kingston 9905713-030.A00G 8GB
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Crucial Technology CT8G4DFRA32A.M8FR 8GB
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内存RAM
Kingston 99U5584-004.A00LF 4GB
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Elpida EBJ40EG8BFWB-JS-F 4GB
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Kingmax Semiconductor GLAG42F-18---------- 8GB
内存RAM
Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
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Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
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内存RAM
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Kingston KVR533D2N4 512MB
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Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-2400C15-8GTZRX 8GB
G Skill Intl F4-2400C15-8GTZRX 8GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
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Kingston 9965669-025.A00G 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
SK Hynix HMA41GR7MFR4N-TFTD 8GB
SK Hynix HMA41GR7MFR4N-TFTD 8GB
内存RAM