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Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
比较
Samsung M393B1G70BH0-YK0 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
总分
Samsung M393B1G70BH0-YK0 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
报告一个错误
低于PassMark测试中的延时,ns
29
49
左右 -69% 更低的延时
更快的读取速度,GB/s
13.5
10.2
测试中的平均数值
更快的写入速度,GB/s
10.2
8.1
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M393B1G70BH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
49
29
读取速度,GB/s
10.2
13.5
写入速度,GB/s
8.1
10.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2465
2088
Samsung M393B1G70BH0-YK0 8GB RAM的比较
Samsung M393B1K70DH0-CK0 8GB
Samsung M393B1K70DH0-YK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB RAM的比较
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX1600C9D3/4G 4GB
SK Hynix HMA451S6AFR8N-TF 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston 99U5743-031.A00G 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMK16GX4M2Z3466C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
Apacer Technology 78.D2GF2.4010B 16GB
Kingston 9905403-090.A01LF 4GB
Samsung M471A1G43DB0-0-B 8GB
Kingston 9905403-447.A00LF 4GB
Transcend Information TS512MSH64V1H 4GB
Kingston KHX2400C11D3/4GX 4GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston 99U5711-001.A00G 4GB
A-DATA Technology DQKD1A08 1GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
PNY Electronics PNY 2GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
PNY Electronics PNY 2GB
Kingston ACR26D4U9S8HJ-8 8GB
A-DATA Technology VDQVE1B16 2GB
Kingston XN205T-MIE 16GB
A-DATA Technology DDR2 800G 2GB
Corsair CMW8GX4M1D3000C16 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
Micron Technology 8ATF1G64HZ-2G3E1 8GB
报告一个错误
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Bug description
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