Samsung M393B1G70BH0-YK0 8GB vs Kingston 9905702-027.A00G 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Kingston 9905702-027.A00G 8GB

Kingston 9905702-027.A00G 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Kingston 9905702-027.A00G 8GB

需要考虑的原因
Kingston 9905702-027.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 49

左右 -104% 更低的延时
更快的读取速度，GB/s

19.2 10.2

测试中的平均数值
更快的写入速度，GB/s

15.6 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Kingston 9905702-027.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 24
读取速度，GB/s

10.2 19.2
写入速度，GB/s

8.1 15.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 3843

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273CH0-CH9 4GB

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A-DATA Technology AO1E34RCSV1-BD7S 16GB

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G Skill Intl F4-2400C14-16GVK 16GB

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Kingston 9905471-006.A01LF 4GB

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Crucial Technology BLS16G4D240FSB.16FBD 16GB

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Corsair CM4X4GD3000C15K4 4GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Corsair CMW64GX4M2D3600C18 32GB

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Kllisre DDR4-8GB 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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G Skill Intl F4-3600C17-8GTZKW 8GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Corsair CMD64GX4M4B3333C16 16GB

Corsair CMD64GX4M4B3333C16 16GB

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Kingston 9905403-156.A00LF 2GB

Kingston 9905701-018.A00G 16GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F4-3300C16-4GRKD 4GB

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Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB