Samsung M393B1G70BH0-YK0 8GB vs Kingston 99U5734-014.A00G 16GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

Kingston 99U5734-014.A00G 16GB

Kingston 99U5734-014.A00G 16GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

Kingston 99U5734-014.A00G 16GB

需要考虑的原因
Kingston 99U5734-014.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

41 49

左右 -20% 更低的延时
更快的读取速度，GB/s

15.4 10.2

测试中的平均数值
更快的写入速度，GB/s

10.8 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

Kingston 99U5734-014.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 41
读取速度，GB/s

10.2 15.4
写入速度，GB/s

8.1 10.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2465 2993

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK4GX4M1D2400C14 4GB

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Kingston X2YH1K-MIE 16GB

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Kingston 9965589-043.E00G 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

Micron Technology 16ATF2G64AZ-2G6E1 16GB

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Samsung M393B1K70QB0-CK0 8GB

Kingston 9905625-065.A00G 16GB

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Kingston 9965525-155.A00LF 8GB

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Kingston ACR16D3LS1NGG/2G 2GB

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Golden Empire CL16-18-18 D4-3400 4GB