Samsung M393B1G70BH0-YK0 8GB vs SK Hynix HMA81GS6CJRJR-VK 8GB

总分

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

总分

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

差异规格评论

差异

Samsung M393B1G70BH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-YK0 8GB

报告一个错误

SK Hynix HMA81GS6CJRJR-VK 8GB

需要考虑的原因
SK Hynix HMA81GS6CJRJR-VK 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 49

左右 -88% 更低的延时
更快的读取速度，GB/s

19.2 10.2

测试中的平均数值
更快的写入速度，GB/s

12.8 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-YK0 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

49 26
读取速度，GB/s

10.2 19.2
写入速度，GB/s

8.1 12.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2465 3180

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

SK Hynix HMA81GS6CJRJR-VK 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Crucial Technology CT8G4SFS824A.M8FA 8GB

Samsung M393B2G70AH0-YH9 16GB

Samsung M393B2G70AH0-YH9 16GB

Samsung M393B2G70BH0-YH9 16GB

Samsung M393B2G70BH0-YH9 16GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

Crucial Technology BL8G36C16U4B.M8FE1 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N

Samsung M378B1G73AH0-CH9 8GB

Samsung M378B1G73AH0-CH9 8GB

SK Hynix HMT325U6CFR8C-H9 2GB

SK Hynix HMT325U6CFR8C-H9 2GB

A-DATA Technology DDR2 1066G 2GB

A-DATA Technology DDR2 1066G 2GB

A-DATA Technology DDR3 1333+ 2GB

A-DATA Technology DDR3 1333+ 2GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB