Samsung M393B1G70QH0-YK0 8GB vs G Skill Intl F4-2400C17-8GIS 8GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

G Skill Intl F4-2400C17-8GIS 8GB

G Skill Intl F4-2400C17-8GIS 8GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

G Skill Intl F4-2400C17-8GIS 8GB

需要考虑的原因
G Skill Intl F4-2400C17-8GIS 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 52

左右 -68% 更低的延时
更快的读取速度，GB/s

15.8 9.8

测试中的平均数值
更快的写入速度，GB/s

11.3 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

G Skill Intl F4-2400C17-8GIS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 31
读取速度，GB/s

9.8 15.8
写入速度，GB/s

8.0 11.3
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2179 2865

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMR64GX4M4C3466C16 16GB

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Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

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Corsair CM2X1024-6400C4 1GB

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Micron Technology 18ASF2G72PZ-2G3B1 16GB

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Kingston 99U5584-010.A00LF 4GB

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Crucial Technology BLE8G4D34AEEAK.K8FB 8GB

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Mushkin 991988 (996988) 4GB

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Mushkin 99[2/7/4]192[F/T] 4GB

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SK Hynix HMT351S6BFR8C-H9 4GB

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Corsair CMH32GX4M4E3200C16 8GB

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PUSKILL DDR3 1600 8G 8GB

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Crucial Technology CT8G4SFS832A.C8FP 8GB

Crucial Technology CT8G4SFS832A.C8FP 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Kingston KF2666C16D4/16G 16GB

Kingston KF2666C16D4/16G 16GB

Samsung 1600 CL10 Series 8GB

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SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB

A-DATA Technology DDR3 1333G 2GB

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Kllisre D4 8G 8GB

Kllisre D4 8G 8GB