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Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB

Samsung M393B1G70QH0-YK0 8GB vs Micron Technology 18ASF1G72PZ-2G1A2 8GB

总分
star star star star star
Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分
star star star star star
Micron Technology 18ASF1G72PZ-2G1A2 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB

差异 规格 评论

差异

Samsung M393B1G70QH0-YK0 8GB 需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB
报告一个错误
Micron Technology 18ASF1G72PZ-2G1A2 8GB 需要考虑的原因
Micron Technology 18ASF1G72PZ-2G1A2 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    49 left arrow 52
    左右 -6% 更低的延时
  • 更快的读取速度，GB/s
    10.5 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    52 left arrow 49
  • 读取速度，GB/s
    9.8 left arrow 10.5
  • 写入速度，GB/s
    8.0 left arrow 8.3
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2179 left arrow 2374

Samsung M393B1G70QH0-YK0 8GB RAM的比较

Kingston 9965433-406.A00LF 8GB
Samsung M393B1G70BH0-YK0 8GB

Micron Technology 18ASF1G72PZ-2G1A2 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
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Corsair CMY8GX3M2A2666C10 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM