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Samsung M393B1K70CH0-CH9 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Samsung M393B1K70CH0-CH9 8GB vs Chun Well Technology Holding Limited MD4U0840180BCW 8GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
Chun Well Technology Holding Limited MD4U0840180BCW 8GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
Chun Well Technology Holding Limited MD4U0840180BCW 8GB 需要考虑的原因
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 44
    左右 -69% 更低的延时
  • 更快的读取速度，GB/s
    18.2 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.3 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 26
  • 读取速度，GB/s
    11.2 left arrow 18.2
  • 写入速度，GB/s
    8.1 left arrow 17.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 3938

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

Chun Well Technology Holding Limited MD4U0840180BCW 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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