Samsung M393B1K70CH0-CH9 8GB vs Corsair CM4X16GC3200C16K4 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Corsair CM4X16GC3200C16K4 16GB

Corsair CM4X16GC3200C16K4 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Corsair CM4X16GC3200C16K4 16GB

需要考虑的原因
Corsair CM4X16GC3200C16K4 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 44

左右 -47% 更低的延时
更快的读取速度，GB/s

17.2 11.2

测试中的平均数值
更快的写入速度，GB/s

14.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Corsair CM4X16GC3200C16K4 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 30
读取速度，GB/s

11.2 17.2
写入速度，GB/s

8.1 14.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 3592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Corsair CMK32GX4M4A2133C15 8GB

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Nanya Technology M2X4G64CB88CHN-DG 4GB

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Panram International Corporation W4U2666P-8G 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Samsung M378A1K43EB2-CVF 8GB

Kingston KHX3200C18D4/8G 8GB

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G Skill Intl F4-4000C18-16GVK 16GB

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Kingston 9905469-143.A00LF 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Crucial Technology BLS4G4D240FSE.8FE 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Crucial Technology CT16G4SFD8213.M16FB 16GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

Team Group Inc. TEAMGROUP-UD3-2400 8GB

G Skill Intl F4-3200C14-16GTRS 16GB

G Skill Intl F4-3200C14-16GTRS 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

A-DATA Technology AO2P24HCST2-BTVS 16GB

A-DATA Technology AO2P24HCST2-BTVS 16GB