Samsung M393B1K70CH0-CH9 8GB vs Corsair CMW32GX4M4Z3200C16 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Corsair CMW32GX4M4Z3200C16 8GB

Corsair CMW32GX4M4Z3200C16 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Corsair CMW32GX4M4Z3200C16 8GB

需要考虑的原因
Corsair CMW32GX4M4Z3200C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 44

左右 -42% 更低的延时
更快的读取速度，GB/s

18 11.2

测试中的平均数值
更快的写入速度，GB/s

14.9 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Corsair CMW32GX4M4Z3200C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 31
读取速度，GB/s

11.2 18.0
写入速度，GB/s

8.1 14.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 3711

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston LV32D4U2S8ME-16X 16GB

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Samsung M395T2863QZ4-CF76 1GB

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Corsair CMT128GX4M8C3000C15 16GB

Corsair CMT128GX4M8C3000C15 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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Corsair CMW32GX4M4Z3200C16 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Samsung M471B5273EB0-CK0 4GB

G Skill Intl F4-4000C17-16GTRSB 16GB

G Skill Intl F4-4000C17-16GTRSB 16GB

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Kingston KVR533D2N4 512MB

Vasekey M378A1K43BB2-CPB 8GB

Vasekey M378A1K43BB2-CPB 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CMK16GX4M2B3600C18 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

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Corsair CM4B16G1L3200K18K2 16GB

Corsair VSA2GSDS667C4 2GB

Corsair VSA2GSDS667C4 2GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB

Gold Key Technology Co Ltd NMUD480E86-3200D 8GB