Samsung 1600 CL10 Series 8GB vs Kingston XW21KG-MIE-NX 8GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 36% 更低的延时

Kingston XW21KG-MIE-NX 8GB

需要考虑的原因
Kingston XW21KG-MIE-NX 8GB

报告一个错误

更快的读取速度，GB/s

16.5 16.1

测试中的平均数值
更快的写入速度，GB/s

10.4 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Kingston XW21KG-MIE-NX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 39
读取速度，GB/s

16.1 16.5
写入速度，GB/s

10.1 10.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 2680

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Corsair CM2X1024-6400C4 1GB

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Corsair CMK16GX4M4C3200C15 4GB

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Kingston KHX1600C9D3/4GX 4GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Kingston KHX1600C9D3/4GX 4GB

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Kingston 9905403-444.A00LF 4GB

V-GEN D4H4GL26A8TS5 4GB

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Kingston ACR512X64D3S13C9G 4GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

InnoDisk Corporation M4S0-8GSSOCIK 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Hewlett-Packard 7EH98AA#ABB 8GB

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Samsung M393B2G70BH0-CK0 16GB

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Kingston MSI24D4S7D8MB-8 8GB