Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology B|B8G4D30BET4K.C8FD 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 77

左右 43% 更低的延时
更快的写入速度，GB/s

8.1 6.9

测试中的平均数值

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

需要考虑的原因
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

报告一个错误

更快的读取速度，GB/s

11.9 11.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 77
读取速度，GB/s

11.2 11.9
写入速度，GB/s

8.1 6.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 1517

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston 9905403-090.A01LF 4GB

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G Skill Intl F3-1333C9-4GIS 4GB

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takeMS International AG TMS2GB264D082-805G 2GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMK32GX4M4E4133C19 8GB

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Kingston 99U5429-007.A00LF 2GB

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Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

G Skill Intl F3-17000CL9-4GBXLD 4GB

SK Hynix HMA82GU6CJR8N-VK 16GB

SK Hynix HMA82GU6CJR8N-VK 16GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

Smart Modular SF4641G8CK8I6GKSEG 8GB

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Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB