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Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB vs Samsung M471A2K43EB1-CWE 16GB

总分
star star star star star
Samsung M471A2K43DB1-CWE 16GB

Samsung M471A2K43DB1-CWE 16GB

总分
star star star star star
Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

差异 规格 评论

差异

Samsung M471A2K43DB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43DB1-CWE 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 55
    左右 33% 更低的延时
Samsung M471A2K43EB1-CWE 16GB 需要考虑的原因
Samsung M471A2K43EB1-CWE 16GB
报告一个错误
  • 更快的写入速度，GB/s
    13.8 left arrow 13.5
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 55
  • 读取速度，GB/s
    15.8 left arrow 15.8
  • 写入速度，GB/s
    13.5 left arrow 13.8
  • 内存带宽，mbps
    25600 left arrow 25600
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    3075 left arrow 2701

Samsung M471A2K43DB1-CWE 16GB RAM的比较

Kingston MSI26D4S9D8ME-16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A2K43EB1-CWE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M471A2K43EB1-CWE 16GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
V-Color Technology Inc. TL8G36818C-E0P2AAS 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
SK Hynix HMA81GU6CJR8N-UH 8GB
SK Hynix HMA81GU6CJR8N-UH 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMV16GX4M1A2133C15 16GB
Corsair CMV16GX4M1A2133C15 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
G Skill Intl F4-3000C15-16GTZ 16GB
内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
Swissbit MEU25664D6BC2EP-30 2GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston 9905702-136.A00G 8GB
Kingston 9905702-136.A00G 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD32GX4M2B3466C16 16GB
Corsair CMD32GX4M2B3466C16 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston KHX2666C16S4/32G 32GB
Kingston KHX2666C16S4/32G 32GB
内存RAM