Samsung M471B5173QH0-YK0 4GB vs Samsung M393A1K43BB1-CTD 8GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

Samsung M393A1K43BB1-CTD 8GB

Samsung M393A1K43BB1-CTD 8GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

45 61

左右 26% 更低的延时
更快的读取速度，GB/s

12.3 8.2

测试中的平均数值
更快的写入速度，GB/s

8.0 6.4

测试中的平均数值

Samsung M393A1K43BB1-CTD 8GB

需要考虑的原因
Samsung M393A1K43BB1-CTD 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

Samsung M393A1K43BB1-CTD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 61
读取速度，GB/s

12.3 8.2
写入速度，GB/s

8.0 6.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1992 1813

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK128GX4M4A2666C16 32GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB

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ISD Technology Limited IM48GU48N21-FFFHM 8GB

ISD Technology Limited IM48GU48N21-FFFHM 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Transcend Information AQD-SD4U8GE21-SG 8GB

Transcend Information AQD-SD4U8GE21-SG 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Team Group Inc. TEAMGROUP-UD4-3000 8GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

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SK Hynix HMA82GS6CJR8N-XN 16GB