Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 44

左右 -83% 更低的延时
更快的读取速度，GB/s

15.3 11.2

测试中的平均数值
更快的写入速度，GB/s

11.5 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 24
读取速度，GB/s

11.2 15.3
写入速度，GB/s

8.1 11.5
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 2744

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Transcend Information TS1GLH64V4H 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Samsung M393B1K70CH0-CH9 8GB

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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Team Group Inc. Vulcan-1600 4GB

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Kingston 9905584-016.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3000C16-16GTZR 16GB

G Skill Intl F4-3000C16-16GTZR 16GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

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Gloway International (HK) STK2400CL17SNB16GB 16GB

Gloway International (HK) STK2400CL17SNB16GB 16GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Kingston 9905668-001.A00G 8GB

Kingston 9905668-001.A00G 8GB