Samsung M393A1G40DB0-CPB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

总分

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

差异规格评论

差异

Samsung M393A1G40DB0-CPB 8GB

需要考虑的原因
Samsung M393A1G40DB0-CPB 8GB

报告一个错误

更高的内存带宽，mbps

17000 14200

左右 1.2% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 49

左右 -75% 更低的延时
更快的读取速度，GB/s

12.8 10.9

测试中的平均数值
更快的写入速度，GB/s

9.7 8.7

测试中的平均数值

规格

完整的技术规格清单

Samsung M393A1G40DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

49 28
读取速度，GB/s

10.9 12.8
写入速度，GB/s

8.7 9.7
内存带宽，mbps

17000 14200

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz no data
排名PassMark (越多越好)

2427 2650

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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