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G Skill Intl F3-1600C11-4GNS 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

G Skill Intl F3-1600C11-4GNS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

总分
star star star star star
G Skill Intl F3-1600C11-4GNS 4GB

G Skill Intl F3-1600C11-4GNS 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

差异 规格 评论

差异

G Skill Intl F3-1600C11-4GNS 4GB 需要考虑的原因
G Skill Intl F3-1600C11-4GNS 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.3 left arrow 12.8
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 -39% 更低的延时
  • 更快的写入速度，GB/s
    9.7 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    14200 left arrow 12800
    左右 1.11 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-1600C11-4GNS 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    39 left arrow 28
  • 读取速度，GB/s
    14.3 left arrow 12.8
  • 写入速度，GB/s
    8.4 left arrow 9.7
  • 内存带宽，mbps
    12800 left arrow 14200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2231 left arrow 2650

G Skill Intl F3-1600C11-4GNS 4GB RAM的比较

Samsung 9905599-020.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB RAM的比较

Samsung M393A1G40DB0-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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