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G Skill Intl F3-1600C11-4GNS 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Compare
G Skill Intl F3-1600C11-4GNS 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Overall score
G Skill Intl F3-1600C11-4GNS 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-1600C11-4GNS 4GB
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Faster reading speed, GB/s
14.3
12.8
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
39
Around -39% lower latency
Faster write speed, GB/s
9.7
8.4
Average value in the tests
Higher memory bandwidth, mbps
14200
12800
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-1600C11-4GNS 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
39
28
Read speed, GB/s
14.3
12.8
Write speed, GB/s
8.4
9.7
Memory bandwidth, mbps
12800
14200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
Timings / Clock speed
9-9-9-24 / 1600 MHz
no data
Ranking PassMark (The more the better)
2231
2650
G Skill Intl F3-1600C11-4GNS 4GB RAM comparisons
Samsung 9905599-020.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB RAM comparisons
Samsung M393A1G40DB0-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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