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Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Samsung M393A1G40DB0-CPB 8GB vs Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Overall score
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Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB

Differences Specifications Comments

Differences

Samsung M393A1G40DB0-CPB 8GB Reasons to consider
Samsung M393A1G40DB0-CPB 8GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 14200
    Around 1.2% higher bandwidth
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 49
    Around -75% lower latency
  • Faster reading speed, GB/s
    12.8 left arrow 10.9
    Average value in the tests
  • Faster write speed, GB/s
    9.7 left arrow 8.7
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M393A1G40DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    49 left arrow 28
  • Read speed, GB/s
    10.9 left arrow 12.8
  • Write speed, GB/s
    8.7 left arrow 9.7
  • Memory bandwidth, mbps
    17000 left arrow 14200
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC3-14200, 1.5V, CAS Supported: 6 7 8 9 10 11 13
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2427 left arrow 2650

Samsung M393A1G40DB0-CPB 8GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

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