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Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB

Samsung M393B1K70CH0-CH9 8GB vs Crucial Technology CT8G4SFRA266.M8FJ 8GB

总分
star star star star star
Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分
star star star star star
Crucial Technology CT8G4SFRA266.M8FJ 8GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB

差异 规格 评论

差异

Samsung M393B1K70CH0-CH9 8GB 需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB
报告一个错误
Crucial Technology CT8G4SFRA266.M8FJ 8GB 需要考虑的原因
Crucial Technology CT8G4SFRA266.M8FJ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 44
    左右 -5% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 11.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    44 left arrow 42
  • 读取速度，GB/s
    11.2 left arrow 14.5
  • 写入速度，GB/s
    8.1 left arrow 13.5
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2293 left arrow 2750

Samsung M393B1K70CH0-CH9 8GB RAM的比较

EVGA 08G-D3-2133-MR 4GB
Elpida EBJ40UG8EFW0-GN-F 4GB

Crucial Technology CT8G4SFRA266.M8FJ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 99U5474-023.A00LF 4GB
Kingston 99U5474-023.A00LF 4GB
Kingston 9905701-006.A00G 16GB
Kingston 9905701-006.A00G 16GB
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Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK16GX4M4B3200C15 4GB
Corsair CMK16GX4M4B3200C15 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Apacer Technology 78.C1GMM.AUF0B 8GB
Apacer Technology 78.C1GMM.AUF0B 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
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G Skill Intl F4-4000C18-32GTRS 32GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
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Crucial Technology CT8G4SFS8266.C8FN 8GB
内存RAM
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Corsair CML8GX3M2A1866C9 4GB
G Skill Intl F4-3600C19-8GSXKB 8GB
G Skill Intl F4-3600C19-8GSXKB 8GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-3600C18-16GTZR 16GB
G Skill Intl F4-3600C18-16GTZR 16GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
Micron Technology 18ADF2G72AZ-2G3B1 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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Golden Empire CL14-14-14 D4-2400 16GB
内存RAM