Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-2400C15-8GRB 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-2400C15-8GRB 8GB

G Skill Intl F4-2400C15-8GRB 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-2400C15-8GRB 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 44

左右 -22% 更低的延时
更快的读取速度，GB/s

14.5 11.2

测试中的平均数值
更快的写入速度，GB/s

11.6 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2400C15-8GRB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 36
读取速度，GB/s

11.2 14.5
写入速度，GB/s

8.1 11.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 3001

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Kingston LV32D4U2S8ME-16X 16GB

Kingston LV32D4U2S8ME-16X 16GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Team Group Inc. TEAMGROUP-UD4-3200 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMK64GX4M2D3000C16 32GB

Corsair CMK64GX4M2D3000C16 32GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

Crucial Technology CT8G4SFS824A.M8FB 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Patriot Memory (PDP Systems) 3000 C15 Series 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A2K40BB0-CPB 16GB

Samsung M393A1G40DB0-CPB 8GB

Samsung M393A1G40DB0-CPB 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Crucial Technology CT8G4SFS832A.C8FE 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

Micron Technology 4ATF1G64HZ-3G2E2 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Apacer Technology 78.C1GMW.AUC0B 8GB

Apacer Technology 78.C1GMW.AUC0B 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Ramaxel Technology RMSA3310MJ86H9F-3200 4GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB

Micron Technology 36ASF4G72PZ-2G6H1 32GB