Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-2400C15-8GVB 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-2400C15-8GVB 8GB

需要考虑的原因
G Skill Intl F4-2400C15-8GVB 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 44

左右 -33% 更低的延时
更快的读取速度，GB/s

15.9 11.2

测试中的平均数值
更快的写入速度，GB/s

12.1 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2400C15-8GVB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 33
读取速度，GB/s

11.2 15.9
写入速度，GB/s

8.1 12.1
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston X6TCK6-MIE 32GB

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Kingston 99U5474-010.A00LF 2GB

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Essencore Limited IM44GU48A30-FGGHAB 4GB

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Hewlett-Packard 7EH64AA# 8GB

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Asgard VMA42UG-MEC1U2AW1 8GB

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Samsung M4 70T5663CZ3-CE6 2GB

Corsair CMH16GX4M2E3200C16 8GB

Corsair CMH16GX4M2E3200C16 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Maxsun MSD48G30M3 8GB

Maxsun MSD48G30M3 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Corsair CMW16GX4M1D3000C16 16GB

Corsair CMW16GX4M1D3000C16 16GB