Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-3200C16-16GTZSK 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-3200C16-16GTZSK 16GB

需要考虑的原因
G Skill Intl F4-3200C16-16GTZSK 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 44

左右 -26% 更低的延时
更快的读取速度，GB/s

15.9 11.2

测试中的平均数值
更快的写入速度，GB/s

11.7 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C16-16GTZSK 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 35
读取速度，GB/s

11.2 15.9
写入速度，GB/s

8.1 11.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 3147

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingmax Semiconductor KLDD48F-B8KU5 1GB

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Corsair CMT64GX4M4K3600C16 16GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

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King Tiger Technology Tigo-2133Mhz-8G 8GB

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Transcend Information TS512MLH64V4H 4GB

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Crucial Technology BLT16G4D30AETA.K16FB 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 99U5584-001.A00LF 4GB

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A-DATA Technology AO1P32MCST2-BZPS 16GB

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Samsung M378B5273CH0-CH9 4GB

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Kingston 9905702-136.A00G 8GB

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Kingston 99U5584-004.A00LF 4GB

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Corsair CMR32GX4M2C3200C16 16GB

Corsair CMR32GX4M2C3200C16 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB

Wilk Elektronik S.A. IRX3000D464L16S/4G 4GB