Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-4000C16-8GVK 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-4000C16-8GVK 8GB

G Skill Intl F4-4000C16-8GVK 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-4000C16-8GVK 8GB

需要考虑的原因
G Skill Intl F4-4000C16-8GVK 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 44

左右 -83% 更低的延时
更快的读取速度，GB/s

19.5 11.2

测试中的平均数值
更快的写入速度，GB/s

18.2 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-4000C16-8GVK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 24
读取速度，GB/s

11.2 19.5
写入速度，GB/s

8.1 18.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2293 3990

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-4000C16-8GVK 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Micron Technology 18ADF2G72AZ-2G3B1 16GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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G Skill Intl F4-2400C15Z8GNT 8GB

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Corsair CMD16GX4M4B3200C16-R 4GB

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Kingston 99U5474-037.A00LF 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CM4B16G7L2666A16K2-O 16GB

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Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

G Skill Intl F4-2666C18-8GTZR 8GB

G Skill Intl F4-2666C18-8GTZR 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston KF3600C18D4/32GX 32GB

Kingston KF3600C18D4/32GX 32GB

Kingston ACR256X64D3S1333C9 2GB

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Avant Technology W641GU42J9266NC 8GB

Avant Technology W641GU42J9266NC 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

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