Samsung M393B1K70CH0-CH9 8GB vs Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 44

左右 -69% 更低的延时
更快的读取速度，GB/s

23.1 11.2

测试中的平均数值
更快的写入速度，GB/s

19.0 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Gold Key Technology Co Ltd NMUD416E82-4600C 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 26
读取速度，GB/s

11.2 23.1
写入速度，GB/s

8.1 19.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 3
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 4276

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation PUD42400C154GNJW 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston KVR16N11/8-SP 8GB

Corsair CMH128GX4M4E3200C16 32GB

Corsair CMH128GX4M4E3200C16 32GB

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