Samsung M393B1K70CH0-CH9 8GB vs Kingston 9965657-011.A00G 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Kingston 9965657-011.A00G 16GB

Kingston 9965657-011.A00G 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Kingston 9965657-011.A00G 16GB

需要考虑的原因
Kingston 9965657-011.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 44

左右 -33% 更低的延时
更快的读取速度，GB/s

11.6 11.2

测试中的平均数值
更快的写入速度，GB/s

9.2 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Kingston 9965657-011.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 33
读取速度，GB/s

11.2 11.6
写入速度，GB/s

8.1 9.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 2102

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CM4X32GC3200C16K2E 32GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Avant Technology F641GU67F9333G 8GB

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Corsair CMK8GX4M2A2133C13 4GB

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Peak Electronics 256X64M-67E 2GB

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Qimonda 64T128020EDL2.5C2 1GB

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Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

SK Hynix HMA81GU6CJR8N-UH 8GB

SK Hynix HMA81GU6CJR8N-UH 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Apacer Technology 76.C102G.D170B 8GB

Apacer Technology 76.C102G.D170B 8GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CMSX8GX4M2A2400C16 4GB

Corsair CMSX8GX4M2A2400C16 4GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Team Group Inc. DDR4 2800 8GB

Team Group Inc. DDR4 2800 8GB