Samsung M393B1K70CH0-CH9 8GB vs Kingston ACR32D4U2S8HD-8X 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Kingston ACR32D4U2S8HD-8X 8GB

Kingston ACR32D4U2S8HD-8X 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Kingston ACR32D4U2S8HD-8X 8GB

需要考虑的原因
Kingston ACR32D4U2S8HD-8X 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 44

左右 -33% 更低的延时
更快的读取速度，GB/s

17.9 11.2

测试中的平均数值
更快的写入速度，GB/s

14.4 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Kingston ACR32D4U2S8HD-8X 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 33
读取速度，GB/s

11.2 17.9
写入速度，GB/s

8.1 14.4
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2293 3271

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Netac Technology Co Ltd E40832A 8GB

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Samsung M3 78T2863QZS-CF7 1GB

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Crucial Technology CT4G4DFS8213.C8FDD2 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

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Kingston 9905403-156.A00LF 2GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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SK Hynix HYMP112U64CP8-Y5 1GB

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G Skill Intl F2-5300CL4-1GBSA 1GB

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Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL16 8GB 8GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

Corsair CMK16GX4M1A2400C16 16GB

Corsair CMK16GX4M1A2400C16 16GB

Kingston 99U5469-045.A00LF 4GB

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Corsair CMR32GX4M2A2666C16 16GB

Corsair CMR32GX4M2A2666C16 16GB

Swissbit MEU25664D6BC2EP-30 2GB

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Patriot Memory (PDP Systems) 3733 C17 Series 8GB

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