Samsung M393B1K70CH0-CH9 8GB vs Kingston KC5N22-MIE 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Kingston KC5N22-MIE 16GB

Kingston KC5N22-MIE 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

低于PassMark测试中的延时，ns

44 51

左右 14% 更低的延时

Kingston KC5N22-MIE 16GB

需要考虑的原因
Kingston KC5N22-MIE 16GB

报告一个错误

更快的读取速度，GB/s

13.1 11.2

测试中的平均数值
更快的写入速度，GB/s

12.7 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Kingston KC5N22-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 51
读取速度，GB/s

11.2 13.1
写入速度，GB/s

8.1 12.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2293 2805

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AM2P24HC8T1-BUSS 8GB

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Kingston KC5N22-MIE 16GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology BLS4G4D240FSB.8FBD 4GB

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Kingston 8ATF1G64HZ-2G3B2 8GB

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Kingston KHX1600C9D3/8G 8GB

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Micron Technology 16ATF2G64AZ-2G6B1 16GB

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Samsung DDR3 8GB 1600MHz 8GB

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SK Hynix HMA81GU6DJR8N-WM 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

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Team Group Inc. TEAMGROUP-UD4-3866 8GB

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G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Mushkin 99[2/7/4]190F 4GB

Mushkin 99[2/7/4]190F 4GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Corsair CMK16GX4M4B3733C17 4GB

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Samsung 1600 CL10 Series 8GB

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A-DATA Technology DDR4 3600 2OZ 8GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

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Kingston 9905744-077.A00G 16GB